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IXFT18N90P

IXFT18N90P

For Reference Only

Part Number IXFT18N90P
PNEDA Part # IXFT18N90P
Description MOSFET N-CH 900V 18A TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,554
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFT18N90P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFT18N90P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFT18N90P, IXFT18N90P Datasheet (Total Pages: 5, Size: 197.72 KB)
PDFIXFV18N90PS Datasheet Cover
IXFV18N90PS Datasheet Page 2 IXFV18N90PS Datasheet Page 3 IXFV18N90PS Datasheet Page 4 IXFV18N90PS Datasheet Page 5

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IXFT18N90P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs97nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5230pF @ 25V
FET Feature-
Power Dissipation (Max)540W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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