IXFX30N110P
For Reference Only
| Part Number | IXFX30N110P |
| PNEDA Part # | IXFX30N110P |
| Description | MOSFET N-CH 1100V 30A PLUS247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 8,190 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 10 - Jun 15 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXFX30N110P Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXFX30N110P |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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IXFX30N110P Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™, PolarP2™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1100V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 235nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS247™-3 |
| Package / Case | TO-247-3 |
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