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IXFX30N110P

IXFX30N110P

For Reference Only

Part Number IXFX30N110P
PNEDA Part # IXFX30N110P
Description MOSFET N-CH 1100V 30A PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,190
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFX30N110P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFX30N110P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFX30N110P, IXFX30N110P Datasheet (Total Pages: 4, Size: 116.34 KB)
PDFIXFK30N110P Datasheet Cover
IXFK30N110P Datasheet Page 2 IXFK30N110P Datasheet Page 3 IXFK30N110P Datasheet Page 4

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IXFX30N110P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1100V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 15A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs235nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13600pF @ 25V
FET Feature-
Power Dissipation (Max)960W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

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