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SI1414DH-T1-GE3

SI1414DH-T1-GE3

For Reference Only

Part Number SI1414DH-T1-GE3
PNEDA Part # SI1414DH-T1-GE3
Description MOSFET N-CH 30V 4A SOT-363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,346
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1414DH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1414DH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1414DH-T1-GE3, SI1414DH-T1-GE3 Datasheet (Total Pages: 12, Size: 267.07 KB)
PDFSI1414DH-T1-GE3 Datasheet Cover
SI1414DH-T1-GE3 Datasheet Page 2 SI1414DH-T1-GE3 Datasheet Page 3 SI1414DH-T1-GE3 Datasheet Page 4 SI1414DH-T1-GE3 Datasheet Page 5 SI1414DH-T1-GE3 Datasheet Page 6 SI1414DH-T1-GE3 Datasheet Page 7 SI1414DH-T1-GE3 Datasheet Page 8 SI1414DH-T1-GE3 Datasheet Page 9 SI1414DH-T1-GE3 Datasheet Page 10 SI1414DH-T1-GE3 Datasheet Page 11

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SI1414DH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs46mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-363
Package / Case6-TSSOP, SC-88, SOT-363

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