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SI1405BDH-T1-E3

SI1405BDH-T1-E3

For Reference Only

Part Number SI1405BDH-T1-E3
PNEDA Part # SI1405BDH-T1-E3
Description MOSFET P-CH 8V 1.6A SOT363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,326
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1405BDH-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1405BDH-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1405BDH-T1-E3, SI1405BDH-T1-E3 Datasheet (Total Pages: 6, Size: 110.87 KB)
PDFSI1405BDH-T1-E3 Datasheet Cover
SI1405BDH-T1-E3 Datasheet Page 2 SI1405BDH-T1-E3 Datasheet Page 3 SI1405BDH-T1-E3 Datasheet Page 4 SI1405BDH-T1-E3 Datasheet Page 5 SI1405BDH-T1-E3 Datasheet Page 6

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SI1405BDH-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds305pF @ 4V
FET Feature-
Power Dissipation (Max)1.47W (Ta), 2.27W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

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