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RGT8NS65DGC9

RGT8NS65DGC9

For Reference Only

Part Number RGT8NS65DGC9
PNEDA Part # RGT8NS65DGC9
Description IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 13,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGT8NS65DGC9 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGT8NS65DGC9
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGT8NS65DGC9 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)8A
Current - Collector Pulsed (Icm)12A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A
Power - Max65W
Switching Energy-
Input TypeStandard
Gate Charge13.5nC
Td (on/off) @ 25°C17ns/69ns
Test Condition400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr)40ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 50A

Power - Max

200W

Switching Energy

3.5mJ (off)

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

20ns/410ns

Test Condition

480V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

54A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 35A

Power - Max

250W

Switching Energy

900µJ (on), 3.8mJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

40ns/270ns

Test Condition

960V, 35A, 3Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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ISL9V3040D3ST-F085C

ON Semiconductor

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Series

EcoSPARK®

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

21A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.6V @ 4V, 6A

Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

17nC

Td (on/off) @ 25°C

-/4µs

Test Condition

300V, 1000Ohm, 5V

Reverse Recovery Time (trr)

7µs

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-PAK (TO-252)

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ON Semiconductor

Manufacturer

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Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

34A

Current - Collector Pulsed (Icm)

56A

Vce(on) (Max) @ Vge, Ic

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Power - Max

125W

Switching Energy

55µJ (on), 60µJ (off)

Input Type

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Gate Charge

37nC

Td (on/off) @ 25°C

11ns/100ns

Test Condition

390V, 7A, 25Ohm, 15V

Reverse Recovery Time (trr)

34ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IKZ75N65EL5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™ 5

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 75A

Power - Max

536W

Switching Energy

1.57mJ (on), 3.2mJ (off)

Input Type

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Gate Charge

436nC

Td (on/off) @ 25°C

120ns/275ns

Test Condition

400V, 75A, 23Ohm, 15V

Reverse Recovery Time (trr)

59ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

PG-TO247-4

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