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RGT8NS65DGC9

RGT8NS65DGC9

For Reference Only

Part Number RGT8NS65DGC9
PNEDA Part # RGT8NS65DGC9
Description IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 13,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGT8NS65DGC9 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGT8NS65DGC9
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGT8NS65DGC9 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)8A
Current - Collector Pulsed (Icm)12A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A
Power - Max65W
Switching Energy-
Input TypeStandard
Gate Charge13.5nC
Td (on/off) @ 25°C17ns/69ns
Test Condition400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr)40ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

536W

Switching Energy

1.57mJ (on), 3.2mJ (off)

Input Type

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Gate Charge

436nC

Td (on/off) @ 25°C

120ns/275ns

Test Condition

400V, 75A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

480V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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ON Semiconductor

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

42ns

Operating Temperature

-40°C ~ 150°C (TJ)

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ON Semiconductor

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-PAK (TO-252)

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