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RGTH80TK65GC11

RGTH80TK65GC11

For Reference Only

Part Number RGTH80TK65GC11
PNEDA Part # RGTH80TK65GC11
Description IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 10,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGTH80TK65GC11 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGTH80TK65GC11
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGTH80TK65GC11 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)31A
Current - Collector Pulsed (Icm)160A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 40A
Power - Max66W
Switching Energy-
Input TypeStandard
Gate Charge79nC
Td (on/off) @ 25°C34ns/120ns
Test Condition400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PFM, SC-93-3
Supplier Device PackageTO-3PFM

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

2.7mJ (on), 1.55mJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

450V, 60A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Power - Max

179W

Switching Energy

620µJ (off)

Input Type

Standard

Gate Charge

85nC

Td (on/off) @ 25°C

-/160ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

3V @ 15V, 8A

Power - Max

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Switching Energy

300µJ (on), 285µJ (off)

Input Type

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Gate Charge

65nC

Td (on/off) @ 25°C

7ns/100ns

Test Condition

800V, 8A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

92A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

50nC

Td (on/off) @ 25°C

17ns/78ns

Test Condition

480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

HB

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Power - Max

283W

Switching Energy

498µJ (on), 363µJ (off)

Input Type

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Gate Charge

210nC

Td (on/off) @ 25°C

40ns/142ns

Test Condition

400V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 Long Leads

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