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RGTH80TK65GC11

RGTH80TK65GC11

For Reference Only

Part Number RGTH80TK65GC11
PNEDA Part # RGTH80TK65GC11
Description IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 10,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGTH80TK65GC11 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGTH80TK65GC11
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGTH80TK65GC11 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)31A
Current - Collector Pulsed (Icm)160A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 40A
Power - Max66W
Switching Energy-
Input TypeStandard
Gate Charge79nC
Td (on/off) @ 25°C34ns/120ns
Test Condition400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PFM, SC-93-3
Supplier Device PackageTO-3PFM

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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