Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK0328DPB-01#J0

RJK0328DPB-01#J0

For Reference Only

Part Number RJK0328DPB-01#J0
PNEDA Part # RJK0328DPB-01-J0
Description MOSFET N-CH 30V 60A LFPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,068
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK0328DPB-01#J0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK0328DPB-01#J0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK0328DPB-01#J0, RJK0328DPB-01#J0 Datasheet (Total Pages: 7, Size: 89.47 KB)
PDFRJK0328DPB-01#J0 Datasheet Cover
RJK0328DPB-01#J0 Datasheet Page 2 RJK0328DPB-01#J0 Datasheet Page 3 RJK0328DPB-01#J0 Datasheet Page 4 RJK0328DPB-01#J0 Datasheet Page 5 RJK0328DPB-01#J0 Datasheet Page 6 RJK0328DPB-01#J0 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RJK0328DPB-01#J0 Datasheet
  • where to find RJK0328DPB-01#J0
  • Renesas Electronics America

  • Renesas Electronics America RJK0328DPB-01#J0
  • RJK0328DPB-01#J0 PDF Datasheet
  • RJK0328DPB-01#J0 Stock

  • RJK0328DPB-01#J0 Pinout
  • Datasheet RJK0328DPB-01#J0
  • RJK0328DPB-01#J0 Supplier

  • Renesas Electronics America Distributor
  • RJK0328DPB-01#J0 Price
  • RJK0328DPB-01#J0 Distributor

RJK0328DPB-01#J0 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs42nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6380pF @ 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

The Products You May Be Interested In

2SJ668(TE16L1,NQ)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

170mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 10V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

PW-MOLD

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXTA3N60P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.9Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

411pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXFC80N10

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™

FDMS9410-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1790pF @ 20V

FET Feature

-

Power Dissipation (Max)

75W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power56

Package / Case

8-PowerTDFN

RJK5033DPP-M0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 25V

FET Feature

-

Power Dissipation (Max)

27.4W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FL

Package / Case

TO-220-3 Full Pack

Recently Sold

BLM18AG601SN1D

BLM18AG601SN1D

Murata

FERRITE BEAD 600 OHM 0603 1LN

TPSC107M016R0200

TPSC107M016R0200

CAP TANT 100UF 20% 16V 2312

MC9S08LH36CLH

MC9S08LH36CLH

NXP

IC MCU 8BIT 36KB FLASH 64LQFP

PIC16F1786-I/SP

PIC16F1786-I/SP

Microchip Technology

IC MCU 8BIT 14KB FLASH 28SDIP

SP6205EM5-L-3-0

SP6205EM5-L-3-0

MaxLinear, Inc.

IC REG LINEAR 3V 500MA SOT23-5

MSP5.0A-M3/89A

MSP5.0A-M3/89A

Vishay Semiconductor Diodes Division

TVS DIODE 5V 10.9V MICROSMP

MT25QL01GBBB8E12-0SIT

MT25QL01GBBB8E12-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

PRTR5V0U2X,215

PRTR5V0U2X,215

Nexperia

TVS DIODE 5.5V SOT143B

3224W-1-103E

3224W-1-103E

Bourns

TRIMMER 10K OHM 0.25W J LEAD TOP

MOCD207R2M

MOCD207R2M

ON Semiconductor

OPTOISO 2.5KV 2CH TRANS 8SOIC

DS18S20+T&R

DS18S20+T&R

Maxim Integrated

SENSOR DIGITAL -55C-125C TO92-3

B160B-13-F

B160B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 1A SMB