Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK0328DPB-01#J0

RJK0328DPB-01#J0

For Reference Only

Part Number RJK0328DPB-01#J0
PNEDA Part # RJK0328DPB-01-J0
Description MOSFET N-CH 30V 60A LFPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,068
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK0328DPB-01#J0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK0328DPB-01#J0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK0328DPB-01#J0, RJK0328DPB-01#J0 Datasheet (Total Pages: 7, Size: 89.47 KB)
PDFRJK0328DPB-01#J0 Datasheet Cover
RJK0328DPB-01#J0 Datasheet Page 2 RJK0328DPB-01#J0 Datasheet Page 3 RJK0328DPB-01#J0 Datasheet Page 4 RJK0328DPB-01#J0 Datasheet Page 5 RJK0328DPB-01#J0 Datasheet Page 6 RJK0328DPB-01#J0 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RJK0328DPB-01#J0 Datasheet
  • where to find RJK0328DPB-01#J0
  • Renesas Electronics America

  • Renesas Electronics America RJK0328DPB-01#J0
  • RJK0328DPB-01#J0 PDF Datasheet
  • RJK0328DPB-01#J0 Stock

  • RJK0328DPB-01#J0 Pinout
  • Datasheet RJK0328DPB-01#J0
  • RJK0328DPB-01#J0 Supplier

  • Renesas Electronics America Distributor
  • RJK0328DPB-01#J0 Price
  • RJK0328DPB-01#J0 Distributor

RJK0328DPB-01#J0 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs42nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6380pF @ 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

The Products You May Be Interested In

STW10N105K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1050V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

21.5nC @ 10V

Vgs (Max)

30V

Input Capacitance (Ciss) (Max) @ Vds

545pF @ 100V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

2SJ668(TE16L1,NQ)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

170mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 10V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

PW-MOLD

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXTA3N60P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.9Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

411pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

GigaMOS™, HiPerFET™, TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.1mOhm @ 65A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6600pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFU110

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

540mOhm @ 900mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 25V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251AA

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

AD842KQ

AD842KQ

Analog Devices

IC OPAMP GP 1 CIRCUIT 14CERDIP

ICE3BR0665J

ICE3BR0665J

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP 8DIP

BAT54C

BAT54C

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT23-3

STM6601CM2DDM6F

STM6601CM2DDM6F

STMicroelectronics

IC SUPERVISOR 3.1V 12TDFN

NC7SP125P5X

NC7SP125P5X

ON Semiconductor

IC BUF NON-INVERT 3.6V SC70-5

ATMEGA16-16AC

ATMEGA16-16AC

Microchip Technology

IC MCU 8BIT 16KB FLASH 44TQFP

SMBJ14CA

SMBJ14CA

Littelfuse

TVS DIODE 14V 23.2V DO214AA

XC2C256-7VQG100I

XC2C256-7VQG100I

Xilinx

IC CPLD 256MC 6.7NS 100VQFP

LT8610ABHMSE#TRPBF

LT8610ABHMSE#TRPBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 3.5A 16MSOP

74VHC14MTC

74VHC14MTC

ON Semiconductor

IC INVERTER SCHMITT 6CH 14TSSOP

L7815CD2T-TR

L7815CD2T-TR

STMicroelectronics

IC REG LINEAR 15V 1.5A D2PAK

RL2010FK-070R43L

RL2010FK-070R43L

Yageo

RES 0.43 OHM 1% 3/4W 2010