2SJ668(TE16L1,NQ)
For Reference Only
| Part Number | 2SJ668(TE16L1,NQ) |
| PNEDA Part # | 2SJ668-TE16L1-NQ |
| Description | MOSFET P-CHANNEL 60V 5A PW-MOLD |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 5,202 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2SJ668(TE16L1 Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | 2SJ668(TE16L1,NQ) |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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2SJ668(TE16L1 Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | PW-MOLD |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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