Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI2302CDS-T1-E3

SI2302CDS-T1-E3

For Reference Only

Part Number SI2302CDS-T1-E3
PNEDA Part # SI2302CDS-T1-E3
Description MOSFET N-CH 20V 2.6A SOT-23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,572,530
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2302CDS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2302CDS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2302CDS-T1-E3, SI2302CDS-T1-E3 Datasheet (Total Pages: 8, Size: 214.01 KB)
PDFSI2302CDS-T1-GE3 Datasheet Cover
SI2302CDS-T1-GE3 Datasheet Page 2 SI2302CDS-T1-GE3 Datasheet Page 3 SI2302CDS-T1-GE3 Datasheet Page 4 SI2302CDS-T1-GE3 Datasheet Page 5 SI2302CDS-T1-GE3 Datasheet Page 6 SI2302CDS-T1-GE3 Datasheet Page 7 SI2302CDS-T1-GE3 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI2302CDS-T1-E3 Datasheet
  • where to find SI2302CDS-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI2302CDS-T1-E3
  • SI2302CDS-T1-E3 PDF Datasheet
  • SI2302CDS-T1-E3 Stock

  • SI2302CDS-T1-E3 Pinout
  • Datasheet SI2302CDS-T1-E3
  • SI2302CDS-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI2302CDS-T1-E3 Price
  • SI2302CDS-T1-E3 Distributor

SI2302CDS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)710mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

FDD6682

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.2mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 15V

FET Feature

-

Power Dissipation (Max)

71W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SCT20N120

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

290mOhm @ 10A, 20V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 20V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 400V

FET Feature

-

Power Dissipation (Max)

175W (Tc)

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

HiP247™

Package / Case

TO-247-3

SPU04N60C3BKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

3.9V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

490pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IPP08CN10L G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

98A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 98A, 10V

Vgs(th) (Max) @ Id

2.4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8610pF @ 50V

FET Feature

-

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

IRF644

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

NC7WZ07P6X

NC7WZ07P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

ADM3202ARN

ADM3202ARN

Analog Devices

IC TRANSCEIVER FULL 2/2 16SOIC

LT3480EDD#TRPBF

LT3480EDD#TRPBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 10DFN

CP2102-GM

CP2102-GM

Silicon Labs

IC USB-TO-UART BRIDGE 28VQFN

ABM3B-25.000MHZ-B2-T

ABM3B-25.000MHZ-B2-T

Abracon

CRYSTAL 25.0000MHZ 18PF SMD

2920L050DR

2920L050DR

Littelfuse

PTC RESET FUSE 60V 500MA 2920

PI6C49X0204CWIE

PI6C49X0204CWIE

Diodes Incorporated

IC CLOCK BUFFER 1:4 200MHZ 8SOIC

BCP53-16T1G

BCP53-16T1G

ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

VUB72-12NOXT

VUB72-12NOXT

IXYS

BRIDGE RECT 3P 1.2KV 75A V1A-PAK

MMSZ4700T1G

MMSZ4700T1G

ON Semiconductor

DIODE ZENER 13V 500MW SOD123

IRF7470PBF

IRF7470PBF

Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC

MC68HC908GZ60CFA

MC68HC908GZ60CFA

NXP

IC MCU 8BIT 60KB FLASH 48LQFP