Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI2302CDS-T1-E3

SI2302CDS-T1-E3

For Reference Only

Part Number SI2302CDS-T1-E3
PNEDA Part # SI2302CDS-T1-E3
Description MOSFET N-CH 20V 2.6A SOT-23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,572,530
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2302CDS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2302CDS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2302CDS-T1-E3, SI2302CDS-T1-E3 Datasheet (Total Pages: 8, Size: 214.01 KB)
PDFSI2302CDS-T1-GE3 Datasheet Cover
SI2302CDS-T1-GE3 Datasheet Page 2 SI2302CDS-T1-GE3 Datasheet Page 3 SI2302CDS-T1-GE3 Datasheet Page 4 SI2302CDS-T1-GE3 Datasheet Page 5 SI2302CDS-T1-GE3 Datasheet Page 6 SI2302CDS-T1-GE3 Datasheet Page 7 SI2302CDS-T1-GE3 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI2302CDS-T1-E3 Datasheet
  • where to find SI2302CDS-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI2302CDS-T1-E3
  • SI2302CDS-T1-E3 PDF Datasheet
  • SI2302CDS-T1-E3 Stock

  • SI2302CDS-T1-E3 Pinout
  • Datasheet SI2302CDS-T1-E3
  • SI2302CDS-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI2302CDS-T1-E3 Price
  • SI2302CDS-T1-E3 Distributor

SI2302CDS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)710mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

IPP08CN10L G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

98A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 98A, 10V

Vgs(th) (Max) @ Id

2.4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8610pF @ 50V

FET Feature

-

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

IXTQ36N30P

IXYS

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

IRF644

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

CSD17551Q3A

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SON (3.3x3.3)

Package / Case

8-PowerVDFN

SSM3J328R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

29.8mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12.8nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

840pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23F

Package / Case

SOT-23-3 Flat Leads

Recently Sold

742792662

742792662

Wurth Electronics

FERRITE BEAD 1 KOHM 0603 1LN

TS2937CP50 ROG

TS2937CP50 ROG

Taiwan Semiconductor Corporation

IC REG LINEAR 5V 500MA TO252

LTC1453CS8#PBF

LTC1453CS8#PBF

Linear Technology/Analog Devices

IC DAC 12BIT V-OUT 8SOIC

TCMT4100

TCMT4100

Vishay Semiconductor Opto Division

OPTOISO 3.75KV 4CH TRANS 16-SOP

SUD40N08-16-E3

SUD40N08-16-E3

Vishay Siliconix

MOSFET N-CH 80V 40A TO252

SI9706DY-T1-E3

SI9706DY-T1-E3

Vishay Siliconix

IC PCMCIA INTFACE SW 8SO

IRG4BC20KDSTRRP

IRG4BC20KDSTRRP

Infineon Technologies

IGBT 600V 16A 60W D2PAK

HX2305NL

HX2305NL

Pulse Electronics Network

XFRMR MODUL 2PORT POE 1:1 10/100

74HC273D

74HC273D

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20SOIC

MAX6105EUR+T

MAX6105EUR+T

Maxim Integrated

IC VREF SERIES 5V SOT23-3

VS-30BQ060TRPBF

VS-30BQ060TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A SMC

T520V337M2R5ATE009

T520V337M2R5ATE009

KEMET

CAP TANT POLY 330UF 2.5V 2917