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IPP08CN10L G

IPP08CN10L G

For Reference Only

Part Number IPP08CN10L G
PNEDA Part # IPP08CN10L-G
Description MOSFET N-CH 100V 98A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP08CN10L G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP08CN10L G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP08CN10L G, IPP08CN10L G Datasheet (Total Pages: 9, Size: 260.09 KB)
PDFIPP08CN10L G Datasheet Cover
IPP08CN10L G Datasheet Page 2 IPP08CN10L G Datasheet Page 3 IPP08CN10L G Datasheet Page 4 IPP08CN10L G Datasheet Page 5 IPP08CN10L G Datasheet Page 6 IPP08CN10L G Datasheet Page 7 IPP08CN10L G Datasheet Page 8 IPP08CN10L G Datasheet Page 9

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IPP08CN10L G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 98A, 10V
Vgs(th) (Max) @ Id2.4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8610pF @ 50V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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