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SI7315DN-T1-GE3

SI7315DN-T1-GE3

For Reference Only

Part Number SI7315DN-T1-GE3
PNEDA Part # SI7315DN-T1-GE3
Description MOSFET P-CH 150V 8.9A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 43,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7315DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7315DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7315DN-T1-GE3, SI7315DN-T1-GE3 Datasheet (Total Pages: 13, Size: 566.31 KB)
PDFSI7315DN-T1-GE3 Datasheet Cover
SI7315DN-T1-GE3 Datasheet Page 2 SI7315DN-T1-GE3 Datasheet Page 3 SI7315DN-T1-GE3 Datasheet Page 4 SI7315DN-T1-GE3 Datasheet Page 5 SI7315DN-T1-GE3 Datasheet Page 6 SI7315DN-T1-GE3 Datasheet Page 7 SI7315DN-T1-GE3 Datasheet Page 8 SI7315DN-T1-GE3 Datasheet Page 9 SI7315DN-T1-GE3 Datasheet Page 10 SI7315DN-T1-GE3 Datasheet Page 11

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SI7315DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs315mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds880pF @ 75V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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