Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIHL630STRL-GE3

SIHL630STRL-GE3

For Reference Only

Part Number SIHL630STRL-GE3
PNEDA Part # SIHL630STRL-GE3
Description MOSFET N-CH 200V D2PAK TO-263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,680
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHL630STRL-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHL630STRL-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHL630STRL-GE3, SIHL630STRL-GE3 Datasheet (Total Pages: 10, Size: 243.5 KB)
PDFSIHL630STRL-GE3 Datasheet Cover
SIHL630STRL-GE3 Datasheet Page 2 SIHL630STRL-GE3 Datasheet Page 3 SIHL630STRL-GE3 Datasheet Page 4 SIHL630STRL-GE3 Datasheet Page 5 SIHL630STRL-GE3 Datasheet Page 6 SIHL630STRL-GE3 Datasheet Page 7 SIHL630STRL-GE3 Datasheet Page 8 SIHL630STRL-GE3 Datasheet Page 9 SIHL630STRL-GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIHL630STRL-GE3 Datasheet
  • where to find SIHL630STRL-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIHL630STRL-GE3
  • SIHL630STRL-GE3 PDF Datasheet
  • SIHL630STRL-GE3 Stock

  • SIHL630STRL-GE3 Pinout
  • Datasheet SIHL630STRL-GE3
  • SIHL630STRL-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIHL630STRL-GE3 Price
  • SIHL630STRL-GE3 Distributor

SIHL630STRL-GE3 Specifications

ManufacturerVishay Siliconix
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

NTTFS004N04CTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

18A (Ta), 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.9mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

3.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 55W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

HUF76439S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2745pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTD5805NT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1725pF @ 25V

FET Feature

-

Power Dissipation (Max)

47W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTMFS5C450NLT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

27A (Ta), 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

STP11N60DM2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

614pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

IXFK44N80P

IXFK44N80P

IXYS

MOSFET N-CH 800V 44A TO-264

NL453232T-102J-PF

NL453232T-102J-PF

TDK

FIXED IND 1MH 30MA 40 OHM SMD

LTM8073IY#PBF

LTM8073IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.8-15V

MF-USMF020-2

MF-USMF020-2

Bourns

PTC RESET FUSE 30V 200MA 1210

MBR140SFT1G

MBR140SFT1G

ON Semiconductor

DIODE SCHOTTKY 40V 1A SOD123L

MURS160T3G

MURS160T3G

ON Semiconductor

DIODE GEN PURP 600V 2A SMB

PX2AF1XX667PSAAM

PX2AF1XX667PSAAM

Honeywell Sensing and Productivity Solutions

HEAVY DUTY PRESSURE TRANSDUCER

SMBJ36A-13-F

SMBJ36A-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB

SMCJ24CAHE3/57T

SMCJ24CAHE3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 24V 38.9V DO214AB

ZHCS1000TA

ZHCS1000TA

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOT23-3

MT25QU512ABB8ESF-0SIT

MT25QU512ABB8ESF-0SIT

Micron Technology Inc.

IC FLASH 512M SPI 133MHZ 16SOIC

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3