SQUN702E-T1_GE3
For Reference Only
| Part Number | SQUN702E-T1_GE3 |
| PNEDA Part # | SQUN702E-T1_GE3 |
| Description | MOSFET N&P-CH COMMON DRAIN |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,454 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 3 - Jun 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SQUN702E-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SQUN702E-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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SQUN702E-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | N and P-Channel, Common Drain |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 40V, 200V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA, 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC, 14nC, 30.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1474pF, 1450pF, 1302pF @ 20V, 100V |
| Power - Max | 48W (Tc), 60W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | Die |
| Supplier Device Package | Die |
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA Rds On (Max) @ Id, Vgs 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 9.1pF @ 3V Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package ES6 (1.6x1.6) |
