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SQUN702E-T1_GE3

SQUN702E-T1_GE3

For Reference Only

Part Number SQUN702E-T1_GE3
PNEDA Part # SQUN702E-T1_GE3
Description MOSFET N&P-CH COMMON DRAIN
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQUN702E-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQUN702E-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQUN702E-T1_GE3, SQUN702E-T1_GE3 Datasheet (Total Pages: 16, Size: 314.84 KB)
PDFSQUN702E-T1_GE3 Datasheet Cover
SQUN702E-T1_GE3 Datasheet Page 2 SQUN702E-T1_GE3 Datasheet Page 3 SQUN702E-T1_GE3 Datasheet Page 4 SQUN702E-T1_GE3 Datasheet Page 5 SQUN702E-T1_GE3 Datasheet Page 6 SQUN702E-T1_GE3 Datasheet Page 7 SQUN702E-T1_GE3 Datasheet Page 8 SQUN702E-T1_GE3 Datasheet Page 9 SQUN702E-T1_GE3 Datasheet Page 10 SQUN702E-T1_GE3 Datasheet Page 11

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SQUN702E-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN and P-Channel, Common Drain
FET FeatureStandard
Drain to Source Voltage (Vdss)40V, 200V
Current - Continuous Drain (Id) @ 25°C30A (Tc), 20A (Tc)
Rds On (Max) @ Id, Vgs9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC, 14nC, 30.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1474pF, 1450pF, 1302pF @ 20V, 100V
Power - Max48W (Tc), 60W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Package / CaseDie
Supplier Device PackageDie

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Input Capacitance (Ciss) (Max) @ Vds

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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