DMN61D8LVT-7
For Reference Only
| Part Number | DMN61D8LVT-7 |
| PNEDA Part # | DMN61D8LVT-7 |
| Description | MOSFET 2N-CH 60V 0.63A TSOT26 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 55,770 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
DMN61D8LVT-7 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
|
| Mfr. Part Number | DMN61D8LVT-7 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- DMN61D8LVT-7 Datasheet
- where to find DMN61D8LVT-7
- Diodes Incorporated
- Diodes Incorporated DMN61D8LVT-7
- DMN61D8LVT-7 PDF Datasheet
- DMN61D8LVT-7 Stock
- DMN61D8LVT-7 Pinout
- Datasheet DMN61D8LVT-7
- DMN61D8LVT-7 Supplier
- Diodes Incorporated Distributor
- DMN61D8LVT-7 Price
- DMN61D8LVT-7 Distributor
DMN61D8LVT-7 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 630mA |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 150mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 12.9pF @ 12V |
| Power - Max | 820mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSOT-26 |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 180mA, 100mA Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package ES6 (1.6x1.6) |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 2A Rds On (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V Power - Max 900mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 23A Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 40V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 204A (Tc) Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 4V @ 35.2mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V Power - Max 1130W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type - Package / Case Module Supplier Device Package Module |
Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.3A, 4A Rds On (Max) @ Id, Vgs 35mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 720pF @ 15V Power - Max 900mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
