Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TSM230N06CI C0G

TSM230N06CI C0G

For Reference Only

Part Number TSM230N06CI C0G
PNEDA Part # TSM230N06CI-C0G
Description MOSFET N-CHANNEL
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 4,770
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 9 - Jun 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TSM230N06CI C0G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberTSM230N06CI C0G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TSM230N06CI C0G, TSM230N06CI C0G Datasheet (Total Pages: 8, Size: 1,370.21 KB)
PDFTSM230N06CZ C0G Datasheet Cover
TSM230N06CZ C0G Datasheet Page 2 TSM230N06CZ C0G Datasheet Page 3 TSM230N06CZ C0G Datasheet Page 4 TSM230N06CZ C0G Datasheet Page 5 TSM230N06CZ C0G Datasheet Page 6 TSM230N06CZ C0G Datasheet Page 7 TSM230N06CZ C0G Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TSM230N06CI C0G Datasheet
  • where to find TSM230N06CI C0G
  • Taiwan Semiconductor Corporation

  • Taiwan Semiconductor Corporation TSM230N06CI C0G
  • TSM230N06CI C0G PDF Datasheet
  • TSM230N06CI C0G Stock

  • TSM230N06CI C0G Pinout
  • Datasheet TSM230N06CI C0G
  • TSM230N06CI C0G Supplier

  • Taiwan Semiconductor Corporation Distributor
  • TSM230N06CI C0G Price
  • TSM230N06CI C0G Distributor

TSM230N06CI C0G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1680pF @ 25V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220
Package / CaseTO-220-3 Full Pack, Isolated Tab

The Products You May Be Interested In

IRFU220PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

4.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251AA

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

STI24N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 100V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPI80N06S3L-05

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 69A, 10V

Vgs(th) (Max) @ Id

2.2V @ 115µA

Gate Charge (Qg) (Max) @ Vgs

273nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

13060pF @ 25V

FET Feature

-

Power Dissipation (Max)

165W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

TK040N65Z,S1F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

57A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 28.5A, 10V

Vgs(th) (Max) @ Id

4V @ 2.85mA

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6250pF @ 300V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

150°C

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

FKP330C

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

330V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

63mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 25V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3 Full Pack

Recently Sold

BF862,215

BF862,215

NXP

JFET N-CH 20V 25MA SOT23

ATMEGA2561-16AI

ATMEGA2561-16AI

Microchip Technology

IC MCU 8BIT 256KB FLASH 64TQFP

SRR0735A-100M

SRR0735A-100M

Bourns

FIXED IND 10UH 2.1A 72 MOHM SMD

2SC4793(F,M)

2SC4793(F,M)

Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

BLM31PG391SN1L

BLM31PG391SN1L

Murata

FERRITE BEAD 390 OHM 1206 1LN

CBC3225T220KR

CBC3225T220KR

Taiyo Yuden

FIXED IND 22UH 780MA 351 MOHM

LM7824ACT

LM7824ACT

ON Semiconductor

IC REG LINEAR 24V 1A TO220-3

1N4007-TP

1N4007-TP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

AD7495ARMZ

AD7495ARMZ

Analog Devices

IC ADC 12BIT SAR 8MSOP

WSL0603R1000FEA18

WSL0603R1000FEA18

Vishay Dale

RES 0.1 OHM 1% 1/5W 0603

MAX232EJE

MAX232EJE

Maxim Integrated

MULTICHANNEL RS-232 DRIVERS/RECE

LTC2870IFE#PBF

LTC2870IFE#PBF

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 2/2 28TSSOP