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TSM230N06CI C0G

TSM230N06CI C0G

For Reference Only

Part Number TSM230N06CI C0G
PNEDA Part # TSM230N06CI-C0G
Description MOSFET N-CHANNEL
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 4,770
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TSM230N06CI C0G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberTSM230N06CI C0G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TSM230N06CI C0G, TSM230N06CI C0G Datasheet (Total Pages: 8, Size: 1,370.21 KB)
PDFTSM230N06CZ C0G Datasheet Cover
TSM230N06CZ C0G Datasheet Page 2 TSM230N06CZ C0G Datasheet Page 3 TSM230N06CZ C0G Datasheet Page 4 TSM230N06CZ C0G Datasheet Page 5 TSM230N06CZ C0G Datasheet Page 6 TSM230N06CZ C0G Datasheet Page 7 TSM230N06CZ C0G Datasheet Page 8

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TSM230N06CI C0G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1680pF @ 25V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220
Package / CaseTO-220-3 Full Pack, Isolated Tab

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