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IXTP8N50P

IXTP8N50P

For Reference Only

Part Number IXTP8N50P
PNEDA Part # IXTP8N50P
Description MOSFET N-CH 500V 8A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP8N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP8N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP8N50P, IXTP8N50P Datasheet (Total Pages: 5, Size: 811.23 KB)
PDFIXTA8N50P Datasheet Cover
IXTA8N50P Datasheet Page 2 IXTA8N50P Datasheet Page 3 IXTA8N50P Datasheet Page 4 IXTA8N50P Datasheet Page 5

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IXTP8N50P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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