STP75N3LLH6
For Reference Only
| Part Number | STP75N3LLH6 |
| PNEDA Part # | STP75N3LLH6 |
| Description | MOSFET N-CH 30V 75A TO-220AB |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 14,682 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 11 - Jun 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STP75N3LLH6 Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STP75N3LLH6 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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STP75N3LLH6 Specifications
| Manufacturer | STMicroelectronics |
| Series | DeepGATE™, STripFET™ VI |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 37.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23.8nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2030pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.8Ohm @ 900mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 40W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
