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STP75N3LLH6

STP75N3LLH6

For Reference Only

Part Number STP75N3LLH6
PNEDA Part # STP75N3LLH6
Description MOSFET N-CH 30V 75A TO-220AB
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 14,682
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP75N3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP75N3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP75N3LLH6, STP75N3LLH6 Datasheet (Total Pages: 21, Size: 1,110.28 KB)
PDFSTU75N3LLH6-S Datasheet Cover
STU75N3LLH6-S Datasheet Page 2 STU75N3LLH6-S Datasheet Page 3 STU75N3LLH6-S Datasheet Page 4 STU75N3LLH6-S Datasheet Page 5 STU75N3LLH6-S Datasheet Page 6 STU75N3LLH6-S Datasheet Page 7 STU75N3LLH6-S Datasheet Page 8 STU75N3LLH6-S Datasheet Page 9 STU75N3LLH6-S Datasheet Page 10 STU75N3LLH6-S Datasheet Page 11

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STP75N3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23.8nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2030pF @ 25V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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