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FQP2N40-F080

FQP2N40-F080

For Reference Only

Part Number FQP2N40-F080
PNEDA Part # FQP2N40-F080
Description MOSFET N-CH 400V 1.8A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 17,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP2N40-F080 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP2N40-F080
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP2N40-F080, FQP2N40-F080 Datasheet (Total Pages: 8, Size: 1,019.94 KB)
PDFFQP2N40-F080 Datasheet Cover
FQP2N40-F080 Datasheet Page 2 FQP2N40-F080 Datasheet Page 3 FQP2N40-F080 Datasheet Page 4 FQP2N40-F080 Datasheet Page 5 FQP2N40-F080 Datasheet Page 6 FQP2N40-F080 Datasheet Page 7 FQP2N40-F080 Datasheet Page 8

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FQP2N40-F080 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.8Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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