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FDB3632

FDB3632

For Reference Only

Part Number FDB3632
PNEDA Part # FDB3632
Description MOSFET N-CH 100V 80A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 124,260
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 8 - Jul 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB3632 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB3632
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB3632, FDB3632 Datasheet (Total Pages: 17, Size: 861.41 KB)
PDFFDH3632 Datasheet Cover
FDH3632 Datasheet Page 2 FDH3632 Datasheet Page 3 FDH3632 Datasheet Page 4 FDH3632 Datasheet Page 5 FDH3632 Datasheet Page 6 FDH3632 Datasheet Page 7 FDH3632 Datasheet Page 8 FDH3632 Datasheet Page 9 FDH3632 Datasheet Page 10 FDH3632 Datasheet Page 11

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FDB3632 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)310W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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