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FQB9N50CTM

FQB9N50CTM

For Reference Only

Part Number FQB9N50CTM
PNEDA Part # FQB9N50CTM
Description MOSFET N-CH 500V 9A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,092
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 5 - Jul 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB9N50CTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB9N50CTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB9N50CTM, FQB9N50CTM Datasheet (Total Pages: 10, Size: 592.26 KB)
PDFFQB9N50CTM Datasheet Cover
FQB9N50CTM Datasheet Page 2 FQB9N50CTM Datasheet Page 3 FQB9N50CTM Datasheet Page 4 FQB9N50CTM Datasheet Page 5 FQB9N50CTM Datasheet Page 6 FQB9N50CTM Datasheet Page 7 FQB9N50CTM Datasheet Page 8 FQB9N50CTM Datasheet Page 9 FQB9N50CTM Datasheet Page 10

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FQB9N50CTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V
FET Feature-
Power Dissipation (Max)135W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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