IGW50N65H5AXKSA1
For Reference Only
| Part Number | IGW50N65H5AXKSA1 |
| PNEDA Part # | IGW50N65H5AXKSA1 |
| Description | IGBT 650V TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,436 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 29 - May 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IGW50N65H5AXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IGW50N65H5AXKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IGW50N65H5AXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, TrenchStop™ |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 150A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Power - Max | 270W |
| Switching Energy | 450µJ (on), 160µJ (off) |
| Input Type | Standard |
| Gate Charge | 116nC |
| Td (on/off) @ 25°C | 21ns/173ns |
| Test Condition | 400V, 25A, 12Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer Microsemi Corporation Series POWER MOS 7® IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 72A Current - Collector Pulsed (Icm) 110A Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 25A Power - Max 417W Switching Energy 370µJ (off) Input Type Standard Gate Charge 110nC Td (on/off) @ 25°C 13ns/55ns Test Condition 600V, 25A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
Manufacturer IXYS Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 54A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 35A Power - Max 250W Switching Energy 900µJ (on), 3.8mJ (off) Input Type Standard Gate Charge 140nC Td (on/off) @ 25°C 40ns/270ns Test Condition 960V, 35A, 3Ohm, 15V Reverse Recovery Time (trr) 40ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case ISOPLUS247™ Supplier Device Package ISOPLUS247™ |
Manufacturer ON Semiconductor Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 50A Power - Max 223W Switching Energy 1.1mJ (on), 1.2mJ (off) Input Type Standard Gate Charge 310nC Td (on/off) @ 25°C 117ns/285ns Test Condition 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr) 77ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
