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DTC123JET1G

DTC123JET1G

For Reference Only

Part Number DTC123JET1G
PNEDA Part # DTC123JET1G
Description TRANS PREBIAS NPN 200MW SC75
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DTC123JET1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberDTC123JET1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
DTC123JET1G, DTC123JET1G Datasheet (Total Pages: 12, Size: 104.69 KB)
PDFNSBC123JF3T5G Datasheet Cover
NSBC123JF3T5G Datasheet Page 2 NSBC123JF3T5G Datasheet Page 3 NSBC123JF3T5G Datasheet Page 4 NSBC123JF3T5G Datasheet Page 5 NSBC123JF3T5G Datasheet Page 6 NSBC123JF3T5G Datasheet Page 7 NSBC123JF3T5G Datasheet Page 8 NSBC123JF3T5G Datasheet Page 9 NSBC123JF3T5G Datasheet Page 10 NSBC123JF3T5G Datasheet Page 11

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DTC123JET1G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75

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