MJD50T4G
For Reference Only
| Part Number | MJD50T4G |
| PNEDA Part # | MJD50T4G |
| Description | TRANS NPN 400V 1A DPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,500 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 29 - May 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
MJD50T4G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | MJD50T4G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- MJD50T4G Datasheet
- where to find MJD50T4G
- ON Semiconductor
- ON Semiconductor MJD50T4G
- MJD50T4G PDF Datasheet
- MJD50T4G Stock
- MJD50T4G Pinout
- Datasheet MJD50T4G
- MJD50T4G Supplier
- ON Semiconductor Distributor
- MJD50T4G Price
- MJD50T4G Distributor
MJD50T4G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Power - Max | 1.56W |
| Frequency - Transition | 10MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/382 Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 35V Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 1mA, 500mV Power - Max 400mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-46-3 Supplier Device Package TO-46 (TO-206AB) |
Manufacturer STMicroelectronics Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 2V Power - Max 25W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package SOT-32-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA, 5V Power - Max 625mW Frequency - Transition 320MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V Power - Max 20W Frequency - Transition - Operating Temperature - Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-126-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 2A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 800 @ 500mA, 4V Power - Max 2W Frequency - Transition 30MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220F |
