Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MUN2114T1G

MUN2114T1G

For Reference Only

Part Number MUN2114T1G
PNEDA Part # MUN2114T1G
Description TRANS PREBIAS PNP 230MW SC59
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 55,158
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 27 - May 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MUN2114T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMUN2114T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
MUN2114T1G, MUN2114T1G Datasheet (Total Pages: 12, Size: 178.41 KB)
PDFNSBA114YF3T5G Datasheet Cover
NSBA114YF3T5G Datasheet Page 2 NSBA114YF3T5G Datasheet Page 3 NSBA114YF3T5G Datasheet Page 4 NSBA114YF3T5G Datasheet Page 5 NSBA114YF3T5G Datasheet Page 6 NSBA114YF3T5G Datasheet Page 7 NSBA114YF3T5G Datasheet Page 8 NSBA114YF3T5G Datasheet Page 9 NSBA114YF3T5G Datasheet Page 10 NSBA114YF3T5G Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • MUN2114T1G Datasheet
  • where to find MUN2114T1G
  • ON Semiconductor

  • ON Semiconductor MUN2114T1G
  • MUN2114T1G PDF Datasheet
  • MUN2114T1G Stock

  • MUN2114T1G Pinout
  • Datasheet MUN2114T1G
  • MUN2114T1G Supplier

  • ON Semiconductor Distributor
  • MUN2114T1G Price
  • MUN2114T1G Distributor

MUN2114T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max230mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59

The Products You May Be Interested In

PDTD123EUF

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

100mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

225MHz

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SC-70

BCR 114F E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

160MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

PG-TSFP-3

DDTA144EE-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-523

Supplier Device Package

SOT-523

UNR91A2G0L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

80mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

80MHz

Power - Max

125mW

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Supplier Device Package

SSMini3-F3

FJNS4201RTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S

Recently Sold

EKXG401ELL820MM25S

EKXG401ELL820MM25S

United Chemi-Con

CAP ALUM 82UF 20% 400V RADIAL

MAX3362EKA#TG16

MAX3362EKA#TG16

Maxim Integrated

IC TRANSCEIVER HALF 1/1 SOT23-8

DS1305EN+T&R

DS1305EN+T&R

Maxim Integrated

IC RTC CLK/CALENDAR SPI 20-TSSOP

ST62T25CM6

ST62T25CM6

STMicroelectronics

IC MCU 8BIT 4KB OTP 28SOIC

AFT27S010NT1

AFT27S010NT1

NXP

FET RF NCH 65V 2700MHZ PLD1.5W

LTST-C150CKT

LTST-C150CKT

Lite-On Inc.

LED RED CLEAR 1206 SMD

XC3S200AN-4FTG256C

XC3S200AN-4FTG256C

Xilinx

IC FPGA 195 I/O 256FTBGA

ICM7555ISA+

ICM7555ISA+

Maxim Integrated

IC OSC SGL TIMER 500KHZ 8-SOIC

HDSP-0770

HDSP-0770

Broadcom

DISPLAY 4X7 NUM RDP BCD HER

BC857B

BC857B

STMicroelectronics

TRANS PNP 45V 0.1A SOT23

XC7VX690T-1FFG1927I

XC7VX690T-1FFG1927I

Xilinx

IC FPGA 600 I/O 1927FCBGA

AOD486A

AOD486A

Alpha & Omega Semiconductor

MOSFET N-CH 40V 50A TO-252