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NGTB15N60S1EG

NGTB15N60S1EG

For Reference Only

Part Number NGTB15N60S1EG
PNEDA Part # NGTB15N60S1EG
Description IGBT 600V 30A 117W TO220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,488
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 21 - Jul 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB15N60S1EG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB15N60S1EG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB15N60S1EG, NGTB15N60S1EG Datasheet (Total Pages: 10, Size: 132.69 KB)
PDFNGTB15N60S1EG Datasheet Cover
NGTB15N60S1EG Datasheet Page 2 NGTB15N60S1EG Datasheet Page 3 NGTB15N60S1EG Datasheet Page 4 NGTB15N60S1EG Datasheet Page 5 NGTB15N60S1EG Datasheet Page 6 NGTB15N60S1EG Datasheet Page 7 NGTB15N60S1EG Datasheet Page 8 NGTB15N60S1EG Datasheet Page 9 NGTB15N60S1EG Datasheet Page 10

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NGTB15N60S1EG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 15A
Power - Max117W
Switching Energy550µJ (on), 350µJ (off)
Input TypeStandard
Gate Charge88nC
Td (on/off) @ 25°C65ns/170ns
Test Condition400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr)270ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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