Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTMFS4C760NT1G

NTMFS4C760NT1G

For Reference Only

Part Number NTMFS4C760NT1G
PNEDA Part # NTMFS4C760NT1G
Description MOSFET N-CH 30V 46A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFS4C760NT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFS4C760NT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTMFS4C760NT1G Datasheet
  • where to find NTMFS4C760NT1G
  • ON Semiconductor

  • ON Semiconductor NTMFS4C760NT1G
  • NTMFS4C760NT1G PDF Datasheet
  • NTMFS4C760NT1G Stock

  • NTMFS4C760NT1G Pinout
  • Datasheet NTMFS4C760NT1G
  • NTMFS4C760NT1G Supplier

  • ON Semiconductor Distributor
  • NTMFS4C760NT1G Price
  • NTMFS4C760NT1G Distributor

NTMFS4C760NT1G Specifications

ManufacturerON Semiconductor
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

DN2535N3-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

350V

Current - Continuous Drain (Id) @ 25°C

120mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

0V

Rds On (Max) @ Id, Vgs

25Ohm @ 120mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92 (TO-226)

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

IRL3714PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.7nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 10V

FET Feature

-

Power Dissipation (Max)

47W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SI7108DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

14A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.9mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

APTC60DAM18CTG

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

143A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 71.5A, 10V

Vgs(th) (Max) @ Id

3.9V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

1036nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

28000pF @ 25V

FET Feature

-

Power Dissipation (Max)

833W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP4

Package / Case

SP4

CPH6354-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-CPH

Package / Case

SOT-23-6 Thin, TSOT-23-6

Recently Sold

ISL4221EIRZ

ISL4221EIRZ

Renesas Electronics America Inc.

IC TRANSCEIVER FULL 1/1 16QFN

BR24T128-W

BR24T128-W

Rohm Semiconductor

IC EEPROM 128K I2C 8-DIP-T

IHLP4040DZERR56M11

IHLP4040DZERR56M11

Vishay Dale

FIXED IND 560NH 32A 1.8 MOHM SMD

AT89S52-24PU

AT89S52-24PU

Microchip Technology

IC MCU 8BIT 8KB FLASH 40DIP

MAX3232CSE+T

MAX3232CSE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

SP0506BAATG

SP0506BAATG

Littelfuse

TVS DIODE 5.5V 8.5V 8MSOP

PBSS5250X,115

PBSS5250X,115

Nexperia

TRANS PNP 50V 2A SOT89

HCPL-181-060E

HCPL-181-060E

Broadcom

OPTOISO 3.75KV TRANS 4MINIFLAT

ESD5V0D3-TP

ESD5V0D3-TP

Micro Commercial Co

TVS DIODE 5V 15.5V SOD323

DTC114EM3T5G

DTC114EM3T5G

ON Semiconductor

TRANS PREBIAS NPN 260MW SOT723

ADM3251EARWZ

ADM3251EARWZ

Analog Devices

DGTL ISO 2.5KV 2CH RS232 20SOIC

PC817XNNIP0F

PC817XNNIP0F

SHARP/Socle Technology

OPTOISOLATOR 5KV TRANS 4SMD