STD3NK50Z-1
For Reference Only
| Part Number | STD3NK50Z-1 |
| PNEDA Part # | STD3NK50Z-1 |
| Description | MOSFET N-CH 500V 2.3A IPAK |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 46,950 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STD3NK50Z-1 Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STD3NK50Z-1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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STD3NK50Z-1 Specifications
| Manufacturer | STMicroelectronics |
| Series | SuperMESH™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 1.15A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-PAK |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1170pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN |
