CSD17575Q3
For Reference Only
| Part Number | CSD17575Q3 |
| PNEDA Part # | CSD17575Q3 |
| Description | MOSFET N-CH 30V 60A 8VSON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 670,145 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jul 6 - Jul 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD17575Q3 Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD17575Q3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD17575Q3 Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4420pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 108W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 650mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 920pF @ 10V FET Feature - Power Dissipation (Max) 65W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FL Package / Case TO-220-3, Short Tab |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 40V FET Feature - Power Dissipation (Max) 150W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
