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IRFSL9N60APBF

IRFSL9N60APBF

For Reference Only

Part Number IRFSL9N60APBF
PNEDA Part # IRFSL9N60APBF
Description MOSFET N-CH 600V 9.2A TO-262
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 10,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFSL9N60APBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFSL9N60APBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFSL9N60APBF, IRFSL9N60APBF Datasheet (Total Pages: 10, Size: 230.13 KB)
PDFIRFSL9N60ATRR Datasheet Cover
IRFSL9N60ATRR Datasheet Page 2 IRFSL9N60ATRR Datasheet Page 3 IRFSL9N60ATRR Datasheet Page 4 IRFSL9N60ATRR Datasheet Page 5 IRFSL9N60ATRR Datasheet Page 6 IRFSL9N60ATRR Datasheet Page 7 IRFSL9N60ATRR Datasheet Page 8 IRFSL9N60ATRR Datasheet Page 9 IRFSL9N60ATRR Datasheet Page 10

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IRFSL9N60APBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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