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SI2316DS-T1-GE3

SI2316DS-T1-GE3

For Reference Only

Part Number SI2316DS-T1-GE3
PNEDA Part # SI2316DS-T1-GE3
Description MOSFET N-CH 30V 2.9A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,590
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 8 - Jul 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2316DS-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2316DS-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2316DS-T1-GE3, SI2316DS-T1-GE3 Datasheet (Total Pages: 8, Size: 210.3 KB)
PDFSI2316DS-T1-GE3 Datasheet Cover
SI2316DS-T1-GE3 Datasheet Page 2 SI2316DS-T1-GE3 Datasheet Page 3 SI2316DS-T1-GE3 Datasheet Page 4 SI2316DS-T1-GE3 Datasheet Page 5 SI2316DS-T1-GE3 Datasheet Page 6 SI2316DS-T1-GE3 Datasheet Page 7 SI2316DS-T1-GE3 Datasheet Page 8

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SI2316DS-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs50mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds215pF @ 15V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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