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SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

For Reference Only

Part Number SI3458BDV-T1-GE3
PNEDA Part # SI3458BDV-T1-GE3
Description MOSFET N-CH 60V 4.1A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 93,834
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 8 - Jul 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3458BDV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3458BDV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3458BDV-T1-GE3, SI3458BDV-T1-GE3 Datasheet (Total Pages: 11, Size: 215.83 KB)
PDFSI3458BDV-T1-GE3 Datasheet Cover
SI3458BDV-T1-GE3 Datasheet Page 2 SI3458BDV-T1-GE3 Datasheet Page 3 SI3458BDV-T1-GE3 Datasheet Page 4 SI3458BDV-T1-GE3 Datasheet Page 5 SI3458BDV-T1-GE3 Datasheet Page 6 SI3458BDV-T1-GE3 Datasheet Page 7 SI3458BDV-T1-GE3 Datasheet Page 8 SI3458BDV-T1-GE3 Datasheet Page 9 SI3458BDV-T1-GE3 Datasheet Page 10 SI3458BDV-T1-GE3 Datasheet Page 11

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SI3458BDV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 30V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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