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FDG312P

FDG312P

For Reference Only

Part Number FDG312P
PNEDA Part # FDG312P
Description MOSFET P-CH 20V 1.2A SC70-6
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDG312P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDG312P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDG312P, FDG312P Datasheet (Total Pages: 5, Size: 200.37 KB)
PDFFDG312P Datasheet Cover
FDG312P Datasheet Page 2 FDG312P Datasheet Page 3 FDG312P Datasheet Page 4 FDG312P Datasheet Page 5

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FDG312P Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs180mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-88 (SC-70-6)
Package / Case6-TSSOP, SC-88, SOT-363

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