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IRGP4750D-EPBF

IRGP4750D-EPBF IRGP4750D-EPBF

For Reference Only

Part Number IRGP4750D-EPBF
PNEDA Part # IRGP4750D-EPBF
Description IGBT 650V 70A 273W TO247AD
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,992
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGP4750D-EPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGP4750D-EPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRGP4750D-EPBF, IRGP4750D-EPBF Datasheet (Total Pages: 12, Size: 665.84 KB)
PDFIRGP4750DPBF Datasheet Cover
IRGP4750DPBF Datasheet Page 2 IRGP4750DPBF Datasheet Page 3 IRGP4750DPBF Datasheet Page 4 IRGP4750DPBF Datasheet Page 5 IRGP4750DPBF Datasheet Page 6 IRGP4750DPBF Datasheet Page 7 IRGP4750DPBF Datasheet Page 8 IRGP4750DPBF Datasheet Page 9 IRGP4750DPBF Datasheet Page 10 IRGP4750DPBF Datasheet Page 11

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IRGP4750D-EPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)105A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 35A
Power - Max273W
Switching Energy1.3mJ (on), 500µJ (off)
Input TypeStandard
Gate Charge105nC
Td (on/off) @ 25°C50ns/105ns
Test Condition400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)150ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Operating Temperature

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

375nC

Td (on/off) @ 25°C

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Test Condition

400V, 60A, 6Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

345nC

Td (on/off) @ 25°C

40ns/240ns

Test Condition

600V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

210ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

700µJ (on), 280µJ (off)

Input Type

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Gate Charge

170nC

Td (on/off) @ 25°C

83ns/170ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

72ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

IRG4BC30W-STRRP

Infineon Technologies

Manufacturer

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Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

100W

Switching Energy

130µJ (on), 130µJ (off)

Input Type

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Gate Charge

51nC

Td (on/off) @ 25°C

25ns/99ns

Test Condition

480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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