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IGW60N60H3FKSA1

IGW60N60H3FKSA1

For Reference Only

Part Number IGW60N60H3FKSA1
PNEDA Part # IGW60N60H3FKSA1
Description IGBT TRENCH 600V 80A TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,238
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGW60N60H3FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGW60N60H3FKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IGW60N60H3FKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)180A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 60A
Power - Max416W
Switching Energy2.1mJ (on), 1.13mJ (off)
Input TypeStandard
Gate Charge375nC
Td (on/off) @ 25°C27ns/252ns
Test Condition400V, 60A, 6Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

440A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 70A

Power - Max

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Switching Energy

1.9mJ (on), 2mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

30ns/120ns

Test Condition

360V, 70A, 2Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

4.2V @ 15V, 10A

Power - Max

100W

Switching Energy

950µJ (on), 1.15mJ (off)

Input Type

Standard

Gate Charge

53nC

Td (on/off) @ 25°C

39ns/220ns

Test Condition

800V, 10A, 23Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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APT80GA90LD40

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

145A

Current - Collector Pulsed (Icm)

239A

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 47A

Power - Max

625W

Switching Energy

1652µJ (on), 1389µJ (off)

Input Type

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Gate Charge

200nC

Td (on/off) @ 25°C

18ns/149ns

Test Condition

600V, 47A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 4A

Power - Max

42W

Switching Energy

61µJ (on), 84µJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

14ns/164ns

Test Condition

400V, 4A, 47Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package

PG-TO251-3

IKA08N65F5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

10.8A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 8A

Power - Max

31.2W

Switching Energy

70µJ (on), 20µJ (off)

Input Type

Standard

Gate Charge

22nC

Td (on/off) @ 25°C

10ns/116ns

Test Condition

400V, 4A, 48Ohm, 15V

Reverse Recovery Time (trr)

41ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3

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