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SI2315BDS-T1-E3

SI2315BDS-T1-E3

For Reference Only

Part Number SI2315BDS-T1-E3
PNEDA Part # SI2315BDS-T1-E3
Description MOSFET P-CH 12V 3A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,330,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2315BDS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2315BDS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2315BDS-T1-E3, SI2315BDS-T1-E3 Datasheet (Total Pages: 9, Size: 213.79 KB)
PDFSI2315BDS-T1-GE3 Datasheet Cover
SI2315BDS-T1-GE3 Datasheet Page 2 SI2315BDS-T1-GE3 Datasheet Page 3 SI2315BDS-T1-GE3 Datasheet Page 4 SI2315BDS-T1-GE3 Datasheet Page 5 SI2315BDS-T1-GE3 Datasheet Page 6 SI2315BDS-T1-GE3 Datasheet Page 7 SI2315BDS-T1-GE3 Datasheet Page 8 SI2315BDS-T1-GE3 Datasheet Page 9

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SI2315BDS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds715pF @ 6V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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