Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7862ADP-T1-E3

SI7862ADP-T1-E3

For Reference Only

Part Number SI7862ADP-T1-E3
PNEDA Part # SI7862ADP-T1-E3
Description MOSFET N-CH 16V 18A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,482
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7862ADP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7862ADP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7862ADP-T1-E3, SI7862ADP-T1-E3 Datasheet (Total Pages: 12, Size: 292.92 KB)
PDFSI7862ADP-T1-GE3 Datasheet Cover
SI7862ADP-T1-GE3 Datasheet Page 2 SI7862ADP-T1-GE3 Datasheet Page 3 SI7862ADP-T1-GE3 Datasheet Page 4 SI7862ADP-T1-GE3 Datasheet Page 5 SI7862ADP-T1-GE3 Datasheet Page 6 SI7862ADP-T1-GE3 Datasheet Page 7 SI7862ADP-T1-GE3 Datasheet Page 8 SI7862ADP-T1-GE3 Datasheet Page 9 SI7862ADP-T1-GE3 Datasheet Page 10 SI7862ADP-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7862ADP-T1-E3 Datasheet
  • where to find SI7862ADP-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI7862ADP-T1-E3
  • SI7862ADP-T1-E3 PDF Datasheet
  • SI7862ADP-T1-E3 Stock

  • SI7862ADP-T1-E3 Pinout
  • Datasheet SI7862ADP-T1-E3
  • SI7862ADP-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI7862ADP-T1-E3 Price
  • SI7862ADP-T1-E3 Distributor

SI7862ADP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3mOhm @ 29A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds7340pF @ 8V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

CTLDM7003-M621 TR

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

280mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 5V

Rds On (Max) @ Id, Vgs

2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.764nC @ 4.5V

Vgs (Max)

12V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TLM621

Package / Case

6-PowerVFDFN

IRLZ34NPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 25V

FET Feature

-

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

JANTX2N6784

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/556

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2.25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 2.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

800mW (Ta), 15W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AF Metal Can

PCP1302-TD-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

266mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

262pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.5W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-89/PCP-1

Package / Case

TO-243AA

SIE812DF-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8300pF @ 20V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PolarPAK® (L)

Package / Case

10-PolarPAK® (L)

Recently Sold

MBR360G

MBR360G

ON Semiconductor

DIODE SCHOTTKY 60V 3A DO201AD

EP53A8LQI

EP53A8LQI

Intel

DC DC CONVERTER 0.6-5V 5W

2EDN7424FXTMA1

2EDN7424FXTMA1

Infineon Technologies

IC GATE DRIVER DSO8

766161102GPTR13

766161102GPTR13

CTS Resistor Products

RES ARRAY 15 RES 1K OHM 16SOIC

ACPL-064L-500E

ACPL-064L-500E

Broadcom

OPTOISO 3.75KV 2CH PUSH PULL 8SO

XC7Z030-1FBG676I

XC7Z030-1FBG676I

Xilinx

IC SOC CORTEX-A9 667MHZ 676FCBGA

0154002.DRT

0154002.DRT

Littelfuse

FUSE BOARD MNT 2A 125VAC/VDC SMD

NC7WZ04P6X

NC7WZ04P6X

ON Semiconductor

IC INVERTER 2CH 2-INP SC70-6

SMAJ6.0A

SMAJ6.0A

Bourns

TVS DIODE 6V 10.3V SMA

AD7870JP

AD7870JP

Analog Devices

IC ADC 12BIT SAR 28PLCC

HSMS-A100-J00J1

HSMS-A100-J00J1

Broadcom

LED RED CLEAR 2PLCC SMD

MC100ELT22DG

MC100ELT22DG

ON Semiconductor

IC TRNSLTR UNIDIRECTIONAL 8SOIC