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SI7862ADP-T1-E3

SI7862ADP-T1-E3

For Reference Only

Part Number SI7862ADP-T1-E3
PNEDA Part # SI7862ADP-T1-E3
Description MOSFET N-CH 16V 18A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,482
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7862ADP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7862ADP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7862ADP-T1-E3, SI7862ADP-T1-E3 Datasheet (Total Pages: 12, Size: 292.92 KB)
PDFSI7862ADP-T1-GE3 Datasheet Cover
SI7862ADP-T1-GE3 Datasheet Page 2 SI7862ADP-T1-GE3 Datasheet Page 3 SI7862ADP-T1-GE3 Datasheet Page 4 SI7862ADP-T1-GE3 Datasheet Page 5 SI7862ADP-T1-GE3 Datasheet Page 6 SI7862ADP-T1-GE3 Datasheet Page 7 SI7862ADP-T1-GE3 Datasheet Page 8 SI7862ADP-T1-GE3 Datasheet Page 9 SI7862ADP-T1-GE3 Datasheet Page 10 SI7862ADP-T1-GE3 Datasheet Page 11

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SI7862ADP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3mOhm @ 29A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds7340pF @ 8V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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