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1N4150TR Datasheet

1N4150TR Datasheet
Total Pages: 3
Size: 76.72 KB
Vishay Semiconductor Diodes Division
This datasheet covers 2 part numbers: 1N4150TR, 1N4150TAP
1N4150TR Datasheet Page 1
1N4150TR Datasheet Page 2
1N4150TR Datasheet Page 3
1N4150TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

300mA (DC)

Voltage - Forward (Vf) (Max) @ If

1V @ 200mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

100nA @ 50V

Capacitance @ Vr, F

2.5pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Supplier Device Package

DO-35

Operating Temperature - Junction

175°C (Max)

1N4150TAP

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

150mA

Voltage - Forward (Vf) (Max) @ If

1V @ 200mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

100nA @ 50V

Capacitance @ Vr, F

2.5pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Supplier Device Package

DO-35

Operating Temperature - Junction

-65°C ~ 175°C