1N5061TAP Datasheet
|
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.15V @ 2.5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4µs Current - Reverse Leakage @ Vr 1µA @ 600V Capacitance @ Vr, F 40pF @ 0V, 1MHz Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.15V @ 2.5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4µs Current - Reverse Leakage @ Vr 1µA @ 400V Capacitance @ Vr, F 40pF @ 0V, 1MHz Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.15V @ 2.5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4µs Current - Reverse Leakage @ Vr 1µA @ 200V Capacitance @ Vr, F 40pF @ 0V, 1MHz Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.15V @ 2.5A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 4µs Current - Reverse Leakage @ Vr 1µA @ 200V Capacitance @ Vr, F 40pF @ 0V, 1MHz Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.15V @ 2.5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4µs Current - Reverse Leakage @ Vr 1µA @ 800V Capacitance @ Vr, F 40pF @ 0V, 1MHz Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.15V @ 2.5A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 4µs Current - Reverse Leakage @ Vr 1µA @ 800V Capacitance @ Vr, F 40pF @ 0V, 1MHz Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.15V @ 2.5A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 4µs Current - Reverse Leakage @ Vr 1µA @ 600V Capacitance @ Vr, F 40pF @ 0V, 1MHz Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.15V @ 2.5A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 4µs Current - Reverse Leakage @ Vr 1µA @ 400V Capacitance @ Vr, F 40pF @ 0V, 1MHz Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
