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1N6639US Datasheet

1N6639US Datasheet
Total Pages: 2
Size: 75.52 KB
Microsemi
This datasheet covers 3 part numbers: 1N6639US, 1N6641US, 1N6640US
1N6639US Datasheet Page 1
1N6639US Datasheet Page 2
1N6639US

Microsemi

Manufacturer

Microsemi Corporation

Series

*

Diode Type

-

Voltage - DC Reverse (Vr) (Max)

-

Current - Average Rectified (Io)

-

Voltage - Forward (Vf) (Max) @ If

-

Speed

-

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

-

Capacitance @ Vr, F

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

Operating Temperature - Junction

-

1N6641US

Microsemi

Manufacturer

Microsemi Corporation

Series

*

Diode Type

-

Voltage - DC Reverse (Vr) (Max)

-

Current - Average Rectified (Io)

-

Voltage - Forward (Vf) (Max) @ If

-

Speed

-

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

-

Capacitance @ Vr, F

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

Operating Temperature - Junction

-

1N6640US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

75V

Current - Average Rectified (Io)

300mA (DC)

Voltage - Forward (Vf) (Max) @ If

1V @ 200mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

100nA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, D

Supplier Device Package

D-5D

Operating Temperature - Junction

-65°C ~ 175°C