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20ETF12 Datasheet

20ETF12 Datasheet
Total Pages: 7
Size: 195.9 KB
Vishay Semiconductor Diodes Division
This datasheet covers 3 part numbers: 20ETF12, 20ETF10, 20ETF08
20ETF12 Datasheet Page 1
20ETF12 Datasheet Page 2
20ETF12 Datasheet Page 3
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20ETF12 Datasheet Page 5
20ETF12 Datasheet Page 6
20ETF12 Datasheet Page 7
20ETF12

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.31V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

400ns

Current - Reverse Leakage @ Vr

100µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C

20ETF10

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.31V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

400ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C

20ETF08

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.31V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

400ns

Current - Reverse Leakage @ Vr

100µA @ 800V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C