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2N5401_S00Z Datasheet

2N5401_S00Z Datasheet
Total Pages: 4
Size: 38.85 KB
ON Semiconductor
2N5401_S00Z Datasheet Page 1
2N5401_S00Z Datasheet Page 2
2N5401_S00Z Datasheet Page 3
2N5401_S00Z Datasheet Page 4
2N5401_S00Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5401_J61Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401_J05Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5401_D81Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401_D28Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401_D10Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401TAR

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401TFR

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401TF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401NLBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5401CYTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401CTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

400MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3